FDN339AN View Datasheet(PDF) - Fairchild Semiconductor
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FDN339AN Datasheet PDF : 5 Pages
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Typical Characteristics (continued)
5
ID = 3A
4
3
VDS = 5V
10V
15V
2
1
0
0
2
4
6
8
10
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1000
800
600
CISS
f = 1MHz
VGS = 0 V
400
200
0
0
COSS
CRSS
4
8
12
16
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
100
RDS(ON) LIMIT
10
1ms
10ms
100ms
1
1s
10s
VGS = 4.5V
DC
0.1 SINGLE PULSE
RθJA = 270oC/W
TA = 25oC
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
20
SINGLE PULSE
16
RθJA=270oC/W
TA=25oC
12
8
4
0
0.0001 0.001
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0.0001
0.001
0.01
0.1
1
t1 , TIME (sec)
R θJA (t) = r(t) * RθJA
RθJA = 270 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1 /t2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
FDN339AN Rev. C
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