FDN339AN View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

View to exact match

FDN339AN

N-Channel 2.5V Specified PowerTrench MOSFET

Fairchild Semiconductor 

November 1999

FDN339AN

N-Channel 2.5V Specified PowerTrench MOSFET

General Description

This N-Channel 2.5V specified MOSFET is produced

using Fairchild Semiconductor's advanced PowerTrench

process that has been especially tailored to minimize the

on-state resistance and yet maintain low gate charge for

superior switching performance.

Applications

• DC/DC converter

• Load switch

Features

• 3 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4.5 V

RDS(ON) = 0.050 Ω @ VGS = 2.5 V.

• Low gate charge (7nC typical).

• High performance trench technology for extremely

low RDS(ON).

• High power and current handling capability.

D

D

S

SuperSOT TM-3

G

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol

Parameter

VDSS

VGSS

ID

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

(Note 1a)

PD

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

TJ, Tstg

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

RθJC

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

Package Outlines and Ordering Information

Device Marking

Device

Reel Size

339

FDN339AN

7’’

G

S

Ratings

20

±8

3

20

0.5

0.46

-55 to +150

250

75

Tape Width

8mm

Units

V

V

A

W

°C

°C/W

°C/W

Quantity

3000 units

1999 Fairchild Semiconductor Corporation

FDN339AN Rev. C

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