FGB30N6S2 View Datasheet(PDF) -

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to

gate-insulation damage by the electrostatic

discharge of energy through the devices. When

handling these devices, care should be exercised to

assure that the static charge built in the handler’s

body capacitance is not discharged through the

device. With proper handling and application

procedures, however, IGBTs are currently being

extensively used in production by numerous

equipment manufacturers in military, industrial and

consumer applications, with virtually no damage

problems due to electrostatic discharge. IGBTs can

be handled safely if the following basic precautions

are taken:

1. Prior to assembly into a circuit, all leads should be

kept shorted together either by the use of metal

shorting springs or by the insertion into conduc-

tive material such as “ECCOSORBD™ LD26” or

equivalent.

2. When devices are removed by hand from their

carriers, the hand being used should be

grounded by any suitable means - for example,

with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices should never be inserted into or removed

from circuits with power on.

5. Gate Voltage Rating - Never exceed the gate-

voltage rating of VGEM. Exceeding the rated VGE

can result in permanent damage to the oxide

layer in the gate region.

6. Gate Termination - The gates of these devices

are essentially capacitors. Circuits that leave the

gate open-circuited or floating should be avoided.

These conditions can result in turn-on of the

device due to voltage buildup on the input

capacitor due to leakage currents or pickup.

7. Gate Protection - These devices do not have an

internal monolithic Zener diode from gate to

emitter. If gate protection is required an external

Zener is recommended.

Operating Frequency Information

Operating frequency information for a typical device

(Figure 3) is presented as a guide for estimating

device performance for a specific application. Other

typical frequency vs collector current (ICE) plots are

possible using the information shown for a typical

unit in Figures 5, 6, 7, 8, 9 and 11. The operating

frequency plot (Figure 3) of a typical device shows

fMAX1 or fMAX2; whichever is smaller at each point.

The information is based on measurements of a

typical device and is bounded by the maximum rated

junction temperature.

fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).

Deadtime (the denominator) has been arbitrarily held

to 10% of the on-state time for a 50% duty factor.

Other definitions are possible. td(OFF)I and td(ON)I are

defined in Figure 21. Device turn-off delay can

establish an additional frequency limiting condition

for an application other than TJM. td(OFF)I is important

when controlling output ripple under a lightly loaded

condition.

fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2).

The allowable dissipation (PD) is defined by

PD = (TJM - TC)/RθJC. The sum of device switching

and conduction losses must not exceed PD. A 50%

duty factor was used (Figure 3) and the conduction

losses (PC) are approximated by PC = (VCE x ICE)/2.

EON2 and EOFF are defined in the switching

waveforms shown in Figure 21. EON2 is the integral

of the instantaneous power loss (ICE x VCE) during

turn-on and EOFF is the integral of the instantaneous

power loss (ICE x VCE) during turn-off. All tail losses

are included in the calculation for EOFF; i.e., the

collector current equals zero (ICE = 0)

©2003 Fairchild Semiconductor Corporation

ECCOSORBD is a Trademark of Emerson and Cumming, Inc.

FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1

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