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FGB30N6S2 View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
FGB30N6S2 600V, SMPS II Series N-Channel IGBT Fairchild
Fairchild Semiconductor Fairchild
FGB30N6S2 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Package Marking and Ordering Information
Device Marking
30N6S2
30N6S2
30N6S2
30N6S2
Device
FGH30N6S2
FGP30N6S2
FGB30N6S2
FGB30N6S2T
Package
TO-247
TO-220AB
TO-263AB
TO-263AB
Reel Size
Tube
Tube
Tube
330mm
Tape Width
N/A
N/A
N/A
24mm
Quantity
30 Units
50 Units
50 Units
800 Units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
BVCES Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0
600
BVECS Emitter to Collector Breakdown Voltage IC = -10mA, VGE = 0
20
ICES Collector to Emitter Leakage Current VCE = 600V TJ = 25°C
-
TJ = 125°C -
IGES Gate to Emitter Leakage Current
VGE = ± 20V
-
-
-
V
-
-
V
-
100
µA
-
2
mA
-
±250 nA
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage IC = 12A,
TJ = 25°C
-
VGE = 15V
TJ = 125°C
-
2.0
2.5
V
1.7
2.0
V
Dynamic Characteristics
QG(ON) Gate Charge
VGE(TH)
VGEP
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
IC = 12A,
VGE = 15V
-
VCE = 300V VGE = 20V
-
23
29
nC
26
33
nC
IC = 250µA, VCE = 600V
3.5
4.3
5.0
V
IC = 12A, VCE = 300V
-
6.5
8.0
V
Switching Characteristics
SSOA Switching SOA
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
TJ = 150°C, RG = 10Ω, VGE =
60
-
15V, L = 100µH, VCE = 600V
-
A
IGBT and Diode at TJ = 25°C,
-
6
-
ns
ICE = 12A,
-
10
-
ns
VCE = 390V,
VGE = 15V,
RG = 10
L = 200µH
-
40
-
ns
-
53
-
ns
-
55
-
µJ
Test Circuit - Figure 20
-
110
-
µJ
-
100 150
µJ
IGBT and Diode at TJ = 125°C -
ICE = 12A,
-
VCE = 390V,
-
VGE = 15V,
RG = 10
-
L = 200µH
-
Test Circuit - Figure 20
-
11
-
ns
17
-
ns
73
100
ns
90
100
ns
55
-
µJ
160 200
µJ
-
250 350
µJ
Thermal Characteristics
RθJC Thermal Resistance Junction-Case
-
-
0.75 °C/W
NOTE:
a2o.sfVtthaheleueIIGGsBBfoTTr.otTwnhloye.TEduOironNd-2Oeinstytlpohesesistucsronpn-edocintiifoileondsssianwrfehigesunhroeaw2tny0p.foicratlhdeiocdoenvisenuiseendceinotfhtehteecsitrccuirictuditeasingdnethr.eEdOioNd1eisisthaet
turn-on loss
the same TJ
3tJh.EeTDuirEnnpC-uOStfptfauEnlnsdeearrgadynNdLooe.sn2sd4i(-nE1gOMaFeFt )tthhioseddpfeoofirinnMtewdeahasesurerthetemheienntcetogollrfeaPclotoowfretchrueDrrienevsnittcaeenqTtauunarnels-oOuzefsfrSpoow(wIiCtecErhi=lnogs0sALos).tsaAsr.ltliTndhgeivsaictteethsstewmtreeartiehlinotegdspeterdodgdepueocr-f
es the true total Turn-Off Energy Loss.
©2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
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