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SUP60N06-12P View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
SUP60N06-12P
Vishay
Vishay Semiconductors Vishay
SUP60N06-12P Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
N-Channel 60-V (D-S) MOSFET
SUP60N06-12P
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
60
0.012 at VGS = 10 V
ID (A)
60d
Qg (Typ.)
33
TO-220AB
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Synchronous Rectifier
• Power Supplies
D
GD S
Top View
Ordering Information: SUP60N06-12P-E3 (Lead (Pb)-free)
SUP60N06-12P-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
60
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
ID
60d
54d
A
IDM
80
Avalanche Current
IAS
40
Single Avalanche Energya
L = 0.1 mH
EAS
80
mJ
Maximum Power Dissipationa
TC = 25 °C
100b
TA = 25 °Cc
PD
3.25
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Junction-to-Case (Drain)
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 69070
S10-1475-Rev. C, 05-Jul-10
Symbol
RthJA
RthJC
Limit
40
1.25
Unit
°C/W
www.vishay.com
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