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FDS4835 View Datasheet(PDF) - Freescale Semiconductor

Part Name
Description
View to exact match
FDS4835
Freescale
Freescale Semiconductor Freescale
FDS4835 Datasheet PDF : 5 Pages
1 2 3 4 5
Freescale
P-Channel 30-V (D-S) MOSFET
Key Features:
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Typical Applications:
White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits
FDS4835/ MC4835
VDS (V)
-30
PRODUCT SUMMARY
rDS(on) (mΩ)
19 @ VGS = -10V
30 @ VGS = -4.5V
ID(A)
-9.5
-7.5
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
±20
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
TA=25°C
TA=70°C
ID
-9.5
-8.3
IDM
-50
IS
-4
Power Dissipation a
TA=25°C
TA=70°C
PD
3.1
2.2
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
RθJA
40
80
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
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