DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
160
Pulsed
120
VGS = –4.0 V
–4.5 V
–10 V
80
40
ID = –10 A
0
−50
0
50 100 150
Tch - Channel Temperature - ˚C
10000
1000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
Coss
100
Crss
10
–0.1
–1
–10
VDS - Drain to Source Voltage - V
–100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/ µs
VGS = 0 V
100
10
1
0.1
1
10
100
IF - Drain Current - A
2SJ602
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–100 Pulsed
VGS = –10 V
–10
–4.0 V
0V
–1
–0.1
–0.01
0
–0.5
–1.0
–1.5
VSD - Source to Drain Voltage - V
1000
SWITCHING CHARACTERISTICS
VDD = –30 V
VGS = –10 V
RG = 0 Ω
100
td(off)
10 td(on)
tf
tr
1
–0.1
–1
–10
–100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
–60
ID = –20 A –12
–50
–10
VDD = –48 V
–40
–30 V
–12 V
–8
–30
VGS
–6
–20
–10
0
0
–4
VDS
–2
0
5 10 15 20 25 30
QG - Gate Charge - nC
Data Sheet D14647EJ3V0DS
5