SSP4N60B View Datasheet(PDF) - Unspecified
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SSP4N60B Datasheet PDF : 10 Pages
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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
600 --
ID = 250 µA, Referenced to 25°C -- 0.65
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
--
--
--
--
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
VGS = 10 V, ID = 2.0 A
-- 2.0
VDS = 40 V, ID = 2.0 A (Note 4) --
4.7
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 710
-- 65
-- 14
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 4.0 A,
RG = 25 Ω
-- 20
-- 55
-- 70
(Note 4, 5)
--
55
VDS = 480 V, ID = 4.0 A,
-- 22
VGS = 10 V
-- 4.8
(Note 4, 5)
--
8.5
--
--
10
100
100
-100
4.0
2.5
--
920
85
19
50
120
150
120
29
--
--
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
4.0
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
16
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4.0 A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 4.0 A,
-- 330
--
ns
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4) -- 2.67
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 27.5mH, IAS = 4.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 4.0A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
6. Only for back side in Viso = 4.0kV and t = 0.3s
©2002 Fairchild Semiconductor Corporation
Rev. B, June 2002
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