MP2A2009 View Datasheet(PDF) - Unspecified
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MP2A2009 Datasheet PDF : 66 Pages
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整流ダイオード/Rectifier Diodes 3
■ ショットキーバリアダイオード Schottky-Barrier Diodes (SBD)
シングル 1 in one-package (Continued)
型式
Device type
SMD 絶対最大定格
対応品 Maximum rating
VRRM IO ＊1
Volts Amps.
KS826S04
SMD 40
5.0 (Tc =110℃)
YG811S04R
40
5.0 (Tc =122℃)
YG812S04R
45 10 (Tc=124℃)
YG811S06R
60
5.0 (Tc =127℃)
YG811S09R
90
5.0 (Tc =116℃)
( ) 条件
＊1 50Hz方形波 duty=1/2
＊2 正弦波 10ms.
＊3 VR=VRRM
IFSM＊2
Amps.
接合、保存温度 電気的特性(Ta=25℃)
Thermal rating Characteristics
Tj and Tstg VFM
IRRM＊3 Rth (j-c)
℃
Max. Volts
Max.mA ℃/W
80 -40 to +150 0.55(IF=5.0A)
5 10
120 -40 to +150 0.55(IF=5.0A)
5 5.0
250 -40 to +150 0.6 (IF=10A)
2 2.5
80 -40 to +150 0.59(IF=5.0A)
5 5.0
80 -40 to +150 0.9 (IF=4.0A)
5 5.0
( ) Conditions
＊1 50Hz Square wave duty=1/2
＊2 Sine wave, 10ms ＊3 VR=VRRM
パッケージ
Package
K-pack(S)
TO-220F
TO-220F
TO-220F
TO-220F
質 量
Net
mass
Grams
0.6
2.0
2.0
2.0
2.0
デュアル 2 in one-package
型式
Device type
SMD 絶対最大定格
対応品 Maximum rating
VRRM IO ＊1
Volts Amps.
KP883C02
20 7.0 (Tc=89℃)
KS883C02
SMD 20 7.0 (Tc=89℃)
YG881C02R
20 8.0 (Tc=103℃)
YG882C02R
20 16 (Tc=94℃)
YG885C02R
20 30 (Tc=81℃)
KP823C03
30 5.0 (Tc=117℃)
KS823C03
SMD 30 5.0 (Tc=117℃)
YG831C03R
30 6.0 (Tc=127℃)
YG802C03R
30 10 (Tc=126℃)
YG832C03R
30 12 (Tc=118℃)
YG835C03R
30 25 (Tc=99℃)
YG838C03R
30 38 (Tc=85℃)
KP823C04
40 5.0 (Tc=107℃)
KS823C04
SMD 40 5.0 (Tc=107℃)
YG801C04R
40 5.0 (Tc=125℃)
YG831C04R
40 6.0 (Tc=122℃)
YG802C04R
40 10 (Tc=110℃)
YG832C04R
40 12 (Tc=112℃)
YG803C04R
40 15 (Tc=92℃)
YG805C04R
40 20 (Tc=100℃)
YG835C04R
40 22 (Tc=96℃)
YG838C04R
40 30 (Tc=85℃)
YG801C06R
60 5.0 (Tc=125℃)
YG802C06R
60 10 (Tc=118℃)
YG803C06R
60 15 (Tc=94℃)
YG805C06R
60 20 (Tc=108℃)
MS808C06
SMD 60 30 (Tc=118℃)
KP823C09
90 5.0 (Tc=100℃)
KS823C09
SMD 90 5.0 (Tc=100℃)
YG801C09R
90 5.0 (Tc=117℃)
YG802C09R
90 10 (Tc=102℃)
YG801C10R
100 5.0 (Tc=117℃)
YG802C10R
100 10 (Tc=102℃)
YG805C10R
100 20 (Tc=91℃)
YG808C10R
100 30 (Tc=80℃)
( ) 条件
＊1 50Hz方形波 duty=1/2 (センタータップ平均出力電流)
＊2 正弦波 10ms. １チップあたり
＊3 １チップあたり
＊4 VR=VRRM １チップあたり
IFSM＊2
Amps.
接合、保存温度 電気的特性(Ta=25℃)
Thermal rating Characteristics
Tj and Tstg VFM＊3
IRRM＊4 Rth (j-c)
℃
Max. Volts
Max.mA ℃/W
パッケージ
Package
質 量
Net
mass
Grams
60 -40 to +125 0.39(IF=2.5A) 10 10.0 K-pack(P)
0.6
60 -40 to +125 0.39(IF=2.5A) 10 10.0 K-pack(S)
0.6
80 -40 to +125 0.39(IF=2.0A) 10
5.0 TO-220F
2.0
120 -40 to +125 0.39(IF=4.0A) 10
3.5 TO-220F
2.0
120 -40 to +125 0.39(IF=8.0A) 30
2.5 TO-220F
2.0
60 -40 to +150 0.47(IF=2.5A)
5 10.0 K-pack(P)
0.6
60 -40 to +150 0.47(IF=2.5A)
5 10.0 K-pack(S)
0.6
90 -40 to +150 0.45(IF=2.0A)
5
5.0 TO-220F
2.0
120 -40 to +150 0.47(IF=4.0A)
5
3.5 TO-220F
2.0
120 -40 to +150 0.45(IF=4.0A)
5
3.5 TO-220F
2.0
120 -40 to +150 0.45(IF=6.0A) 15
2.5 TO-220F
2.0
200 -40 to +150 0.45(IF=12.5A) 10
2.0 TO-220F
2.0
60 -40 to +150 0.55(IF=2.5A)
5 10.0 K-pack(P)
0.6
60 -40 to +150 0.55(IF=2.5A)
5 10.0 K-pack(S)
0.6
100 -40 to +150 0.55(IF=2.0A)
5
5.0 TO-220F
2.0
80 -40 to +150 0.53(IF=2.0A)
2
5.0 TO-220F
2.0
120 -40 to +150 0.55(IF=4.0A)
5
3.5 TO-220F
2.0
120 -40 to +150 0.53(IF=4.0A)
3
3.5 TO-220F
2.0
120 -40 to +150 0.55(IF=7.0A)
3
3.5 TO-220F
2.0
120 -40 to +150 0.6 (IF=10A)
15
2.5 TO-220F
2.0
120 -40 to +150 0.53(IF=8.0A)
6
2.5 TO-220F
2.0
180 -40 to +150 0.53(IF=12.5A) 8
2.0 TO-220F
2.0
60 -40 to +150 0.58(IF=2.0A)
5
5.0 TO-220F
2.0
80 -40 to +150 0.58(IF=4.0A)
5
3.5 TO-220F
2.0
100 -40 to +150 0.58(IF=6.0A)
5
3.0 TO-220F
2.0
80 -40 to +150 0.58(IF=8.0A) 15
2.5 TO-220F
2.0
150 -40 to +150 0.58(IF=12.5A) 3
1.2 TFP
0.8
60 -40 to +150 0.9 (IF=2.0A)
5 10.0 K-pack(P)
0.6
60 -40 to +150 0.9 (IF=2.5A)
5 10.0 K-pack(S)
0.6
60 -40 to +150 0.9 (IF=2.0A)
2
5.0 TO-220F
2.0
80 -40 to +150 0.9 (IF=4.0A)
5
3.5 TO-220F
2.0
60 -40 to +150 0.8 (IF=1.5A)
0.7 5.0 TO-220F
2.0
80 -40 to +150 0.8 (IF=3.0A)
1.2 3.5 TO-220F
2.0
100 -40 to +150 0.8 (IF=5.0A)
2.5 2.5 TO-220F
2.0
180 -40 to +150 0.8 (IF=10A)
20
2.0 TO-220F
2.0
( ) Conditions
＊1 50Hz Square wave duty=1/2 (Average forward current of centertap full wave connection)
＊2 Sine wave, 10ms per element
＊3 per element
＊4 VR=VRRM per element
23
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