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K40T1202 View Datasheet(PDF) - Infineon Technologies

Part NameDescriptionManufacturer
K40T1202 Low Loss DuoPack : IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel Emitter Controlled Diode Infineon
Infineon Technologies Infineon
K40T1202 Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IKW40N120T2
TrenchStop® 2nd Generation Series
20.0mJ
*) Eon and Etsinclude losses
due to diode recovery
15.0mJ
10.0mJ
5.0mJ
*) Eon and Ets include losses
due to diode recovery
Ets*
10.0 mJ
Ets*
7.5 mJ
Eon*
Eon*
5.0 mJ
Eoff
Eoff
2.5 mJ
0.0mJ
20A
40A
60A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses as
a function of collector current
(inductive load, TJ=175°C, VCE=600V,
VGE=0/15V, RG=12Ω,
Dynamic test circuit in Figure E)
0.0 mJ




RG, GATE RESISTOR
Figure 14. Typical switching energy losses as a
function of gate resistor
(inductive load, TJ=175°C, VCE=600V,
VGE=0/15V, IC=40A,
Dynamic test circuit in Figure E)
7.5mJ
*) Eon and Ets include losses
due to diode recovery
*) Eon and Ets include losses
due to diode recovery
Ets*
10.0mJ
5.0mJ
2.5mJ
Eoff
Eon*
7.5mJ
Ets*
5.0mJ
2.5mJ
Eon*
Eoff
0.0mJ
0°C
50°C
100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses as
a function of junction temperature
(inductive load, VCE=600V, VGE=0/15V,
IC=40A, RG=12Ω,
Dynamic test circuit in Figure E)
0.0mJ
400V
500V
600V
700V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses as
a function of collector emitter
voltage
(inductive load, TJ=175°C, VGE=0/15V,
IC=40A, RG=12Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
8
Rev. 2.4 23.09.2014
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