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K40T1202 View Datasheet(PDF) - Infineon Technologies

Part NameDescriptionManufacturer
K40T1202 Low Loss DuoPack : IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel Emitter Controlled Diode Infineon
Infineon Technologies Infineon
K40T1202 Datasheet PDF : 15 Pages
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IKW40N120T2
TrenchStop® 2nd Generation Series
1000ns
t
d(off)
100ns tf
t
d(on)
10ns
t
r
1ns
20A
40A
60A
Figure 9.
IC, COLLECTOR CURRENT
Typical switching times as a
function of collector current
(inductive load, TJ=175°C, VCE=600V,
VGE=0/15V, RG=12Ω,
Dynamic test circuit in Figure E)
1000 ns
td(off)
tf
100 ns
td(on)
10 ns tr




RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=175°C, VCE=600V,
VGE=0/15V, IC=40A,
Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V, VGE=0/15V,
IC=40A, RG=12Ω,
Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as a
function of junction temperature
(IC = 1.5mA)
IFAG IPC TD VLS
7
Rev. 2.4 23.09.2014
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