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K40T1202 View Datasheet(PDF) - Infineon Technologies

Part NameDescriptionManufacturer
K40T1202 Low Loss DuoPack : IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel Emitter Controlled Diode Infineon
Infineon Technologies Infineon
K40T1202 Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IKW40N120T2
TrenchStop® 2nd Generation Series
Dynamic Characteristic
Input capacitance
Ciss
VCE=25V,
-
2360
- pF
Output capacitance
Coss
VGE=0V,
-
230
-
Reverse transfer capacitance
Crss
f=1MHz
-
125
-
Gate charge
QGate
VCC=960V, IC=40A
-
192
- nC
VGE=15V
Internal emitter inductance
LE
-
13
- nH
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC(SC)
VGE=15V,tSC10s
-
-A
VCC = 600V,
Tj,start = 25C
220
Tj.start = 175C
156
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t b
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25C,
VCC=600V,IC=40A,
VGE=0/15V,
RG=12,
L2)=80nH,
C2)=67pF
Energy losses include
“tail” and diode reverse
recovery.
Tj=25C,
VR=600V, IF=40A,
diF/dt=950A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
33
28
314
94
3.2
2.05
5.25
285
3.3
23
350
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
µC
A
- A/s
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance L a n d Stray capacity C due to dynamic test circuit in Figure E.
IFAG IPC TD VLS
3
Rev. 2.4 23.09.2014
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