K40T1202 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

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K40T1202

Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel Emitter Controlled Diode

Infineon Technologies 

IKW40N120T2

TrenchStop® 2nd Generation Series

600ns

500ns

400ns

TJ=175°C

300ns

200ns

100ns

TJ=25°C

0ns

400A/µs 800A/µs 1200A/µs 1600A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time as a

function of diode current slope

(VR=600V, IF=40A,

Dynamic test circuit in Figure E)

8µC

TJ=175°C

6µC

4µC

TJ=25°C

2µC

0µC

400A/µs

800A/µs 1200A/µs 1600A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 24. Typical reverse recovery charge as

a function of diode current slope

(VR=600V, IF=40A,

Dynamic test circuit in Figure E)

40A

35A

TJ=175°C

30A

TJ=25°C

25A

20A

15A

10A

5A

0A

400A/µs 800A/µs 1200A/µs 1600A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current as

a function of diode current slope

(VR=600V, IF=40A,

Dynamic test circuit in Figure E)

-1000A/µs

-800A/µs

-600A/µs

TJ=25°C

TJ=175°C

-400A/µs

-200A/µs

-0A/µs

400A/µs 800A/µs 1200A/µs 1600A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 26. Typical diode peak rate of fall of

reverse recovery current as a

function of diode current slope

(VR=600V, IF=40A,

Dynamic test circuit in Figure E)

IFAG IPC TD VLS

11

Rev. 2.4 23.09.2014

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