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K10A60D Просмотр технического описания (PDF) - Toshiba

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K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type / Switching Regulator Applications Toshiba
Toshiba Toshiba
K10A60D Datasheet PDF : 6 Pages
1 2 3 4 5 6
RDS (ON) – Tc
2.5
COMMON SOURCE
VGS = 10 V
2.0
PULSE TEST
1.5
ID=10A
5A
1.0
2.5A
0.5
0
80
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
TK10A60D
IDR – VDS
100
COMMON SOURCE
Tc = 25°C
PULSE TEST
10
1
10
53
1
VGS = 0, 1 V
0.1
0 0.2 0.4 0.6 0.8 −1.0 −1.2 1.4
DRAIN-SOURCE VOLTAGE VDS (V)
10000
1000
100
CAPACITANCE – VDS
Ciss
Coss
10 COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1
1
Crss
10
100
DRAIN-SOURCE VOLTAGE VDS (V)
Vth – Tc
5
4
3
2
COMMON SOURCE
1
VDS = 10 V
ID = 1 mA
PULSE TEST
0
80
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
PD – Tc
80
60
40
20
0
0
40
80
120
160
200
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
500
20
VDS
400
16
300
12
VDD = 100 V
400
200
Common source 8
200 ID= 10 A
VGS
Tc = 25°C
100
4
Pulse test
0
0
0
10
20
30
40
TOTAL GATE CHARGE Qg (nC)
4
2009-09-29
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