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K10A60D Просмотр технического описания (PDF) - Toshiba

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K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type / Switching Regulator Applications Toshiba
Toshiba Toshiba
K10A60D Datasheet PDF : 6 Pages
1 2 3 4 5 6
TK10A60D
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±30 V, VDS = 0 V
±1
μA
IDSS
VDS = 600 V, VGS = 0 V
10
μA
V (BR) DSS ID = 10 mA, VGS = 0 V
600
V
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
RDS (ON) VGS = 10 V, ID = 5 A
0.62 0.75 Ω
Yfs
VDS = 10 V, ID = 5 A
1.5 6.0
S
Ciss
1350
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
6
pF
Coss
135
tr
10 V
VGS
ID = 5 A VOUT
22
0V
ton
50 Ω
RL =
40 Ω
55
ns
tf
15
VDD ∼− 200 V
toff
Duty 1%, tw = 10 μs
100
Qg
Qgs
VDD ∼− 400 V, VGS = 10 V, ID = 10 A
Qgd
25
16
nC
9
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 10 A, VGS = 0 V
IDR = 10 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
10
A
40
A
1.7
V
1300
ns
12
μC
Marking
K10A60D
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Part No. (or abbreviation code)
Lot No.
Note 4
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29
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