datasheetbank_Logo   Технический паспорт Поисковая и бесплатно техническое описание Скачать
Номер в каталоге  

K10A60D Просмотр технического описания (PDF) - Toshiba

Номер в каталогеКомпоненты Описаниепроизводитель
K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type / Switching Regulator Applications Toshiba
Toshiba Toshiba
K10A60D Datasheet PDF : 6 Pages
1 2 3 4 5 6
TK10A60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
TK10A60D
Switching Regulator Applications
Unit: mm
Low drain-source ON-resistance: RDS (ON) = 0.62 (typ.)
High forward transfer admittance: |Yfs| = 6.0 S (typ.)
Low leakage current: IDSS = 10 μA (VDS = 600 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
600
V
600
V
±30
V
10
A
40
45
W
363
mJ
10
A
4.5
mJ
150
°C
-55 to 150
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.78
°C/W
62.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 6.36 mH, RG = 25 Ω, IAR = 10 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
1
3
2009-09-29
Direct download click here
 

Share Link : Toshiba
All Rights Reserved © datasheetbank.com 2014 - 2019 [ политика конфиденциальности ] [ Запрос Даташит ]