J6812 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
View to exact match
J6812
Fairchild Semiconductor
J6812 Datasheet PDF : 5 Pages
| |||
FJAF6812
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BVCBO = 1500V
• High Switching Speed : tF(typ.) =0.1µs
• For Color Monitor
1
TO-3PF
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
ICP*
Collector Current (Pulse)
PC
Collector Dissipation
TJ
Junction Temperature
TSTG
Storage Temperature
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed
Rating
1500
750
6
12
24
60
150
-55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
ICES
Collector Cut-off Current
VCB=1400V, RBE=0
ICBO
Collector Cut-off Current
VCB=800V, IE=0
IEBO
Emitter Cut-off Current
VEB=4V, IC=0
BVEBO
Emitter-Base Breakdown Voltage
IE=500µA, IC=0
6
hFE1
hFE2
DC Current Gain
VCE=5V, IC=1A
10
VCE=5V, IC=8A
5
VCE(sat)
Collector-Emitter Saturation Voltage IC=8A, IB=2A
VBE(sat)
Base-Emitter Saturation Voltage
IC=8A, IB=2A
tSTG*
tF*
Storage Time
Fall Time
VCC=200V, IC=7A, RL=30Ω
IB1= 1.4A, IB2= - 2.8A
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
1
mA
10
µA
1
mA
V
40
8
3
V
1.5
V
3
µs
0.2
µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Typ
RθjC
Thermal Resistance, Junction to Case
1.4
Max
2.08
Units
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. B1, May 2001
|
|
Share Link: