N3PF06 View Datasheet(PDF) - Unspecified
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N3PF06 Datasheet PDF : 12 Pages
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Electrical characteristics
2
Electrical characteristics
STN3PF06
Note:
(TCASE=25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
Zero gate voltage
IDSS drain current (VGS = 0)
ID(on) On state drain current
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250 µA, VGS = 0
60
V
VDS = Max rating
VDS = Max rating, TC=125 °C
VDS > ID(on) x RDS(on)max,
2.5
VGS =10 V
1 µA
10 µA
A
VGS = ±20 V
±100 nA
VDS = VGS, ID = 250 µA
2
4V
VGS = 10 V, ID = 1.5 A
0.20 0.22 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
VDS > ID(on) x RDS(on)max,
ID= 1.25 A
VDS = 25 V, f = 1 MHz,
VGS = 0
ID = 12 A, VDD = 48 V,
VGS = 10 V
(see Figure 14)
1.5
S
850
pF
230
pF
75
pF
16 21 nC
4
nC
6
nC
For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed
4/12
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