IRF512 View Datasheet(PDF) - Unspecified
Part Name
Description
View to exact match
IRF512 Datasheet PDF : 3 Pages
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OBSOLETE
l Ultra Low RSS(on) per Footprint Area
VSS
l Low Thermal Resistance
-20V
l Bi-Directional P-Channel Switch
l Super Low Profile (<.8mm)
l Available Tested on Tape & Reel
PD - 93943
IRF6150
HEXFET® Power MOSFET
RSS(on) max
0.036Ω@VGS1,2 = -4.5V
0.052Ω@VGS1,2 = -2.5V
IS
-7.9A
-6.3A
Description
True chip-scale packaging is available from International
Rectifier. Through the use of advanced processing tech-
niques and a unique packaging concept, extremely low
on-resistance and the highest power densities in the
industry have been made available for battery and load
management applications. These benefits, combined with
the ruggedized device design that International Rectifier
is well known for, provides the designer with an ex-
tremely efficient and reliable device.
6
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The FlipFET package, is one-third the footprint of a
comparable SO-8 package and has a profile of less than
.8mm. Combined with the low thermal resistance of the
die level device, this makes the FlipFET the best device
for applications where printed circuit board space is at a
premium and in extremely thin application environments
such as battery packs, cell phones and PCMCIA cards.
Absolute Maximum Ratings
VSS
IS @ TC = 25°C
IS @ TC = 70°C
ISM
PD @TC = 25°C
PD @TC = 70°C
VGS
TJ, TSTG
Parameter
Source- Source Voltage
Continuous Current, VGS1 = VGS2 = -4.5V
Continuous Current, VGS1 = VGS2 = -4.5V
Pulsed Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJA
RθJ-PCB
Parameter
Junction-to-Ambient
Junction-to-PCB mounted
www.irf.com
6
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Max.
-20
±7.9
±6.3
±40
3.0
1.9
24
± 12
-55 to + 150
Typ.
17
Max.
42
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Units
V
A
W
mW/°C
V
°C
Units
°C/W
1
07/26/04
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