FQPF8N60C View Datasheet(PDF) -

FQPF8N60C

N-Channel QFET® MOSFET

600 V, 7.5 A, 1.2 Ω

November 2013

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild s proprietary,

planar stripe, DMOS technology. This advanced

technology has been especially tailored to minimize on-

state resistance, provide superior switching performance,

and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high

efficiency switched mode power supplies, active power

factor correction, electronic lamp ballasts based on half

bridge topology.

Features

• 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V,

ID = 3.75 A

• Low Gate Charge (Typ. 28 nC)

• Low Crss (Typ. 12 pF)

• 100% Avalanche Tested

D

GDS

G

TO-220F

Absolute Maximum Ratings TC = 25oC unless otherwise noted.

Symbol

Parameter

VDSS

Drain-Source Voltage

ID

Drain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C)

IDM

Drain Current - Pulsed

(Note 1)

VGSS

Gate-Source Voltage

EAS

Single Pulsed Avalanche Energy

(Note 2)

IAR

Avalanche Current

(Note 1)

EAR

Repetitive Avalanche Energy

(Note 1)

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

PD

Power Dissipation (TC = 25°C)

- Derate above 25°C

TJ, TSTG

Operating and Storage Temperature Range

TL

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

RθJC

RθJA

Parameter

Thermal Resistance, Junction-to-Case, Max.

Thermal Resistance, Junction-to-Ambient, Max.

S

FQPF8N60C

600

7.5 *

4.6 *

30 *

± 30

230

7.5

14.7

4.5

48

0.38

-55 to +150

300

FQPF8N60C

2.6

62.5

Unit

V

A

A

A

V

mJ

A

mJ

V/ns

W

W/°C

°C

°C

Unit

°C/W

°C/W

©2004 Fairchild Semiconductor Corporation

1

FQPF8N60C Rev. C0

www.fairchildsemi.com

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