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FDS4435BZ_07 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FDS4435BZ_07
Fairchild
Fairchild Semiconductor Fairchild
FDS4435BZ_07 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Typical Characteristics TJ = 25°C unless otherwise noted
10
ID = -8.8A
8
6
VDD = -10V
VDD = -15V
VDD = -20V
4
4000
1000
Ciss
Coss
2
0
0
5
10
15
20
25
30
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
20
10
TJ = 125oC
TJ = 25oC
1
0.01
0.1
1
tAV, TIME IN AVALANCHE(ms)
10 30
Figure 9. Unclamped Inductive
Switching Capability
10
Crss
f = 1MHz
VGS = 0V
100
0.1
1
10
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
10-4
VDS = 0V
10-5
10-6
TJ = 125oC
10-7
TJ = 25oC
10-8
10-9
0
5
10
15
20
25
30
-VGS, GATE TO SOURCE VOLTAGE(V)
Figure 10. Gate Leakage Current vs Gate to
Source Voltage
100
8
VGS = -10V
6
4
VGS = -4.5V
2
RθJA = 50oC/W
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
Figure 11. Maximum Continuous Drain
Current vs Ambient Temperature
10
100us
1ms
1
THIS AREA IS
LIMITED BY rDS(on)
0.1
0.01
0.1
1
SINGLE PULSE
TJ = MAX RATED
RθJA = 125oC/W
TA = 25oC
10
10ms
100ms
1s
10s
DC
80
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 12. Forward Bias Safe
Operating Area
©2007 Fairchild Semiconductor Corporation
4
FDS4435BZ Rev.C
www.fairchildsemi.com
 

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