FDS4435BZ_07 View Datasheet(PDF) - Fairchild Semiconductor
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FDS4435BZ_07 Datasheet PDF : 6 Pages
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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250µA, VGS = 0V
-30
ID = -250µA, referenced to 25°C
-21
VDS = -24V, VGS = 0V
VGS = ±25V, VDS = 0V
V
mV/°C
1
µA
±10
µA
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = VDS, ID = -250µA
-1
-2.1
ID = -250µA, referenced to 25°C
6
VGS = -10V, ID = -8.8A
16
VGS = -4.5V, ID = -6.7A
26
VGS = -10V, ID = -8.8A, TJ = 125°C
22
VDS = -5V, ID = -8.8A
24
-3
V
mV/°C
20
35
mΩ
28
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = -15V, VGS = 0V,
f = 1MHz
f = 1MHz
1385 1845 pF
275
365
pF
230
345
pF
4.5
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = -15V, ID = -8.8A,
VGS = -10V, RGEN = 6Ω
VGS = 0V to -10V
VGS = 0V to -5V
VDD = -15V,
ID = -8.8A
10
20
ns
6
12
ns
30
48
ns
12
22
ns
28
40
nC
16
23
nC
5.2
nC
7.4
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0V, IS = -8.8A (Note 2)
-0.9
-1.2
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = -8.8A, di/dt = 100A/µs
29
44
ns
23
35
nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50°C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 125°C/W when mounted on
a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. Starting TJ = 25°C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V
©2007 Fairchild Semiconductor Corporation
2
FDS4435BZ Rev.C
www.fairchildsemi.com
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