IRFP4232PBF View Datasheet(PDF) - International Rectifier
Part Name
Description
View to exact match
IRFP4232PBF Datasheet PDF : 8 Pages
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600
ID = 42A
500
400
300
TJ = 125°C
200
TJ = 25°C
100
0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
Fig 13. On-Resistance Vs. Gate Voltage
5.5
5.0
4.5
ID = 250µA
4.0
3.5
3.0
2.5
2.0
1.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 15. Threshold Voltage vs. Temperature
1
IRFP4232PbF
1000
800
ID
TOP
12A
18A
BOTTOM 42A
600
400
200
0
25
50
75
100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Temperature
200
ton= 1µs
Duty cycle = 0.25
160
Half Sine Wave
Square Pulse
120
80
40
0
25
50
75
100 125 150 175
Case Temperature (°C)
Fig 16. Typical Repetitive peak Current vs.
Case temperature
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
τJ τJ
τ1 τ1
R1R1
R2R2
τ2 τ2
R3R3
τ3 τ3
R4R4
τCτ
Ri (°C/W)
0.0091
0.0487
τi (sec)
0.000003
0.000071
τ4 τ4
0.1264 0.001743
Ci= τi/Ri
Ci i/Ri
0.1660 0.024564
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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