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IRFP4232 View Datasheet(PDF) - International Rectifier

Part Name
Description
View to exact match
IRFP4232
IR
International Rectifier IR
IRFP4232 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFP4232PbF
1600
1400
1200
1000
L = 220nH
C= 0.4µF
C= 0.3µF
C= 0.2µF
1000.0
100.0
TJ = 175°C
800
10.0
600
400
200
0
25
50
75
100
125
150
Temperature (°C)
Fig 7. Typical EPULSE vs.Temperature
1.0
TJ = 25°C
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode Forward Voltage
12000
10000
8000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
20
ID= 42A
16
12
VDS= 200V
VDS= 125V
VDS= 50V
6000
8
4000
2000
Coss
Crss
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
4
0
0 40 80 120 160 200 240 280
QG Total Gate Charge (nC)
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
60
54
48
42
36
30
24
18
12
6
0
25
50
75
100 125 150 175
TC , CaseTemperature (°C)
Fig 11. Maximum Drain Current vs. Case Temperature
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1µsec
10
10µsec
100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 12. Maximum Safe Operating Area
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