O2N60P View Datasheet(PDF) - Silicon Standard Corp.
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O2N60P Datasheet PDF : 6 Pages
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SSM02N60P
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=1A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
VDS=20V, ID=1A
VDS=600V, VGS=0V
VDS=480V, VGS=0V
VGS= ± 20V
ID=2A
VDS=480V
VGS=10V
VDD=300V
ID=2A
RG=10Ω,VGS=10V
RD=150Ω
VGS=0V
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
f=1.0MHz
600 -
-
V
- 0.6 - V/℃
-
-
8Ω
2
-
4
V
- 0.2 -
S
-
- 10 uA
-
- 100 uA
-
- ±100 nA
- 14 - nC
-
2
- nC
- 8.5 - nC
- 9.5 - ns
- 12 - ns
- 21 - ns
-
9
- ns
- 155 - pF
- 27 - pF
- 14 - pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
ISM
Pulsed Source Current ( Body Diode )1
VSD
Forward On Voltage3
Test Conditions
VD=VG=0V , VS=1.5V
Tj=25℃, IS=2A, VGS=0V
Min. Typ. Max. Units
-
-
2
A
-
-
6
A
-
- 1.5 V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=60mH , RG=25Ω , IAS=2A.
3.Pulse width <300us , duty cycle <2%.
Rev.2.01 6/06/2003
www.SiliconStandard.com
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