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K2698 View Datasheet(PDF) - Unspecified

Part Name
Description
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K2698 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Electrical Characteristics(Tc=25)
Characteristics
Symbol Test Condition
Gate leakage current
IGSS
VGS=±25V,VDS=0V
Gate-source breakdown voltage
V(BR)GSS IG=±10 µA,VDS=0V
Drain cut -off current
IDSS
VDS=500V,VGS=0V
Drain -source breakdown voltage
Breakdown voltage Temperature
coefficient
V(BR)DSS
BVDSS/
TJ
ID=10 mA,VGS=0V
ID=250µA,Referenced
to 25
Gate threshold voltage
VGS(th)
VDS=10V,ID=1mA
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=10A
Forward Transconductance
gfs
VDS=40V,ID=10A
Input capacitance
Ciss
VDS=25V,
Reverse transfer capacitance
Output capacitance
Crss
VGS=0V,
Coss
f=1MHz
Switching time
Rise time
Turn-on time
Fall time
Turn-off time
tr
VDD=250V,
ton
ID=18A
tf
RG=25Ω
toff
(Note4,5)
Total gate charge(gate-source
plus gate-drain)
VDD=400V,
Qg
VGS=10V,
Gate-source charge
Qgs
ID=18A
Gate-drain("miller") Charge
Qgd
(Note4,5)
Min
-
±30
-
500
-
2
-
-
-
-
-
-
-
-
-
-
-
-
2SK2698
Type
-
-
-
-
Max
±10
-
100
-
Unit
nA
V
µA
V
0.5
-
V/
-
4
V
0.225 0.265 Ω
16
-
S
2530 3290
11
14.3 pF
300
390
40
90
150
310
ns
95
200
110
230
42
55
nC
12
-
14
-
Source-Drain Ratings and Characteristics(Ta=25)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
IDR
-
-
-
18
A
Pulse drain reverse current
IDRP
-
-
-
27
A
Forward voltage(diode)
VDSF
IDR=18A,VGS=0V
-
-
-1.9
V
Reverse recovery time
Reverse recovery charge
trr
IDR=18A,VGS=0V,
Qrr
dIDR / dt =100 A / µs
-
1.6
-
ns
-
20
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=1.83mH IAS=18A,VDD=50V,RG=25Ω,Starting TJ=25
3.ISD≤18A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, all for your advance
 

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