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P16NS25 View Datasheet(PDF) - Unspecified

Part NameDescriptionManufacturer
P16NS25 N-CHANNEL 250V - 0.23Ω - 16A TO-220 / TO-220FP MESH OVERLAY™ MOSFET ETC
Unspecified 
P16NS25 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
STP16NS25
STP16NS25FP
N-CHANNEL 250V - 0.23- 16A TO-220 / TO-220FP
MESH OVERLAY™ MOSFET
TYPE
VDSS
RDS(on)
ID
STP16NS25
STP16NS25FP
250 V
250 V
< 0.28
< 0.28
16 A
16 A
s TYPICAL RDS(on) = 0.23
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
s IDEAL FOR MONITOR’s B+ FUNCTION
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
May 2002
Value
STP16NS25
STP16NS25FP
250
250
± 20
16
16(*)
11
11(*)
64
64(*)
140
40
1
0.33
5
-
2500
–65 to 150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
(1) ISD16A, di/dt300 A/µs, VDDV(BR)DSS, TjTjMAX
(*) Limited only by maximum temperature allowed
1/9
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