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B11NM60 View Datasheet(PDF) - Unspecified

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Description
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B11NM60 Datasheet PDF : 16 Pages
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STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS
ID
ID
IDM(2)
PTOT
dv/dt(3)
Gate- source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC=100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating Factor
Peak diode recovery voltage slope
VISO Insulation withstand voltage (DC)
TJ
Operating junction temperature
Tstg
Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 11A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX.
Value
Unit
TO-220/D²PAK/I²PAK TO-220FP
±30
11
7
44
160
1.28
15
--
-65 to 150
150
11(1)
7(1)
44(1)
35
0.28
2500
V
A
A
A
W
W/°C
V/ns
V
°C
°C
Table 2. Thermal data
Symbol
Parameter
Value
Unit
TO-220/D²PAK/I²PAK TO-220FP
Rthj-case
Rthj-a
Tl
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
0.78
62.5
300
3.57 °C/W
°C/W
°C
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS
(starting Tj=25°C, Id=Iar, Vdd=50V)
Value
Unit
5.5
A
350
mJ
3/16
 

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