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YA862C04R View Datasheet(PDF) - Unspecified

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YA862C04R Datasheet PDF : 0 Pages
Fig.3 Comparison of forward characteristics
10
10
10
1
1
1
0.1
YG805C04R 100°C
YG805C04R 25°C
YG865C04R 100°C
YG865C04R 25°C
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Forward voltage VF (V)
0.1
YG805C06R 100°C
YG805C06R 25°C
YG865C06R 100°C
YG865C06R 25°C
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Forward voltage VF (V)
0.1
YG805C10R 100°C
YG805C10R 25°C
YG865C10R 100°C
YG865C10R 25°C
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V)
Fig.4 Comparison of reverse characteristics
YG805C04R Tj = 100°C
103
YG865C04R
102
YG805C04R Tj = 25°C
101
100
YG865C04R
10
20
30
40
Reverse voltage VR (V)
YG805C06R Tj = 100°C
103
YG865C06R
102
Tj = 25°C
101
YG805C06R
100
YG865C06R
10 20 30 40 50 60
Reverse voltage VR (V)
YG805C10R Tj = 100°C
103
102
YG865C10R
101
YG805C10R Tj = 25°C
100
YG865C10R
10–1
0 10 20 30 40 50 60 70 80 90 100 110
Reverse voltage VR (V)
3. Device Characteristics
Figure 3 compares the forward characteristics of
the low IR-SBD with those of conventional products,
and Fig. 4 compares their reverse characteristics. The
SBD loss is the sum of the forward and reverse losses,
and it is desirable that this loss be reduced within the
actual operating temperature range. In particular, the
reverse loss caused by increased IR at higher tempera-
tures must be considered. A tradeoff relation exists
between VF and IR, however, and VF typically increases
Low IR Schottky Barrier Diode Series
when IR is reduced. The newly developed 40 to 100 V
SBD achieves a dramatic decrease in loss at high
temperatures through the use of a new barrier metal
as described in chapter 2 and optimized crystal specifi-
cations in order to achieve an approximate 10 %
increase in VF at rated current compared to a conven-
tional product, and an IR that is reduced to approxi-
mately 1/10th that of the conventional product.
4. Consideration of the Generated Loss
A simulation was performed to calculate the loss
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