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B14NK50Z 데이터 시트보기 (PDF) - Unspecified

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B14NK50Z N-channel 500V - 0.34Ω - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESHTM Power MOSFET ETC
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B14NK50Z Datasheet PDF : 19 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z Electrical charac-
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
ID = 1mA, VGS= 0
VDS = Max rating,
VDS = Max rating, TC
=125°C
VGS = ±20V
VDS= VGS, ID = 100µA
VGS= 10V, ID= 6A
Min. Typ. Max. Unit
500
V
1
µA
50 µA
±10 nA
3 3.75 4.5 V
0.34 0.38
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS =8V, ID = 6A
12
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
2000
pF
238
pF
55
pF
Coss
(2)
eq .
Equivalent output
capacitance
VGS=0, VDS =0V to 400V
150
pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=400V, ID = 12A
VGS =10V
69 92 nC
12
nC
31
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
inceases from 0 to 80% VDSS
Table 7. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
Test conditions
VDD=250 V, ID=6A,
RG=4.7Ω, VGS=10V
(see Figure 19)
Min. Typ. Max. Unit
24
ns
16
ns
5/19
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