B14NK50Z View Datasheet(PDF) - Unspecified
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B14NK50Z Datasheet PDF : 19 Pages
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Electrical ratings STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS
(starting Tj=25°C, Id=Iar, Vdd=50V)
Value
Unit
12
A
400
mJ
Table 4. Gate-source zener diode
Symbol
Parameter
Test conditions
BVGSO
Igs=±1mA
Gate-source breakdown voltage
(Open Drain)
Min. Typ. Max. Unit
30
V
1.1
Protection features og gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
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