2SC3039 View Datasheet(PDF) - Unspecified
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2SC3039 Datasheet PDF : 1 Pages
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2SC3039
Silicon Epitaxial Planar Transistor
GENERAL DESCRIPTION
Silicon NPN high frequency, high power transistors
in a plastic envelope, primarily for use in audio and
general purpose
2SC3039
Silicon Epitaxial Planar Transistor
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Fall time
LIMITING VALUES
SYMBOL
VCESM
VCEO
VEBO
IC
IB
Ptot
Tstg
Tj
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
VBE = 0V
TO-220
Tmb 25
IC = 3.0A; IB = 0.3A
IF = 3.0A
IC=3A,IB1=-IB2=0.3A,VCC=60V
CONDITIONS
VBE = 0V
Tmb 25
TYP MAX UNIT
-
500
V
-
300
V
-
7
A
-
A
-
50
W
-
2
V
1.5
2.0
V
0.4
1.0
s
MIN MAX UNIT
-
500
V
-
300
V
5
V
-
7
A
-
2
A
-
50
W
-55 150
-
150
ELECTRICAL CHARACTERISTICS
SYMBOL
ICBO
IEBO
V(BR)CEO
VCEsat
hFE
fT
Cc
ton
ts
tf
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
CONDITIONS
VCB=400V
VEB=5V
IC=1mA
IC = 2.0A; IB = 0.5A
IC = 0.8A; VCE = 5V
IC = 1A; VCE = 12V
VCB = 10V
IC=3A,IB1=-IB2=0.3A,VCC=60V
IC=3A,IB1=-IB2=0.3A,VCC=60V
IC=3A,IB1=-IB2=0.3A,VCC=60V
TYP MAX UNIT
-
0.2
mA
-
0.2
mA
300
V
-
2
V
15
100
25
-
MHz
120
-
pF
1.0
us
2.5
us
0.4
1.0
us
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
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