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ADR441BRZ-REEL7 데이터 시트보기 (PDF) - Analog Devices

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ADR441BRZ-REEL7 Ultralow Noise, LDO XFET Voltage References with Current Sink and Source ADI
Analog Devices ADI
ADR441BRZ-REEL7 Datasheet PDF : 20 Pages
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ADR440/ADR441/ADR443/ADR444/ADR445
ADR445 ELECTRICAL CHARACTERISTICS
VIN = 5.5 V to 18 V, TA = 25°C, CIN = COUT = 0.1 μF, unless otherwise noted.
Table 6.
Parameter
OUTPUT VOLTAGE
A Grade
B Grade
INITIAL ACCURACY
A Grade
B Grade
TEMPERATURE DRIFT
A Grade
B Grade
LINE REGULATION
LOAD REGULATION
QUIESCENT CURRENT
VOLTAGE NOISE
VOLTAGE NOISE DENSITY
TURN-ON SETTLING TIME
LONG-TERM STABILITY1
OUTPUT VOLTAGE HYSTERESIS
RIPPLE REJECTION RATIO
SHORT CIRCUIT TO GND
SUPPLY VOLTAGE OPERATING RANGE
SUPPLY VOLTAGE HEADROOM
Symbol
VO
Conditions
VOERR
TCVO
ΔVO/ΔVIN
ΔVO/ΔILOAD
ΔVO/ΔILOAD
IIN
eN p-p
eN
tR
VO
VO_HYS
RRR
ISC
VIN
VIN − VO
−40°C < TA < +125°C
−40°C < TA < +125°C
−40°C < TA < +125°C
ILOAD = 0 mA to 10 mA, VIN = 6.5 V,
−40°C < TA < +125°C
ILOAD = 0 mA to −5 mA, VIN = 6.5 V,
−40°C < TA < +125°C
No load, −40°C < TA < +125°C
0.1 Hz to 10 Hz
1 kHz
1000 hours
fIN = 10 kHz
Min Typ Max Unit
4.994 5.000 5.006 V
4.998 5.000 5.002 V
6
mV
0.12 %
2
mV
0.04 %
2
10
ppm/°C
1
3
ppm/°C
10
20
ppm/V
−50
+50 ppm/mA
−50
+50 ppm/mA
3
3.75 mA
2.25
μV p-p
90
nV/√Hz
10
μs
50
ppm
70
ppm
–75
dB
27
mA
5.5
18
V
500
mV
1 The long-term stability specification is noncumulative. The drift in the subsequent 1000-hour period is significantly lower than in the first 1000-hour period.
Rev. A | Page 7 of 20
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