KA1M0680 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
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KA1M0680 Datasheet PDF : 8 Pages
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SPS
KA1M0680
ELECTRICAL CHARACTERISTICS (SFET part)
(Ta=25°C unless otherwise specified)
Characteristic
Symbol
Test condition
Drain-source breakdown voltage
Zero gate voltage drain current
BVDSS
IDSS
Static drain-source on resistance (note) RDS(ON)
Forward transconductance (note)
gfs
Input capacitance
Ciss
Output capacitance
Coss
VGS=0V, ID=50µA
VDS=Max., Rating, VGS=0V
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
VGS=10V, ID=4.0A
VDS=15V, ID=4.0A
VGS=0V, VDS=25V, f=1MHz
Reverse transfer capacitance
Crss
Turn on delay time
Rise time
Turn off delay time
Fall time
td(on)
tr
td(off)
tf
VDD=0.5BVDSS, ID=6.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
Total gate charge
(gate-source+gate-drain)
Gate-source charge
Gate-drain (Miller) charge
Qg
VGS=10V, ID=6.0A,
VDS=0.5BVDSS (MOSFET
Qgs
switching time are
essentially independent of
Qgd
operating temperature)
NOTE: Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
Min.
800
−
−
−
1.5
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
1.6
2.5
1600
140
42
60
150
300
130
70
16
27
Max.
−
50
200
2.0
−
−
−
−
−
−
−
−
−
−
−
Unit
V
µA
µA
Ω
mho
pF
nS
nC
3
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