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STB7NK80Z-1 View Datasheet(PDF) - STMicroelectronics

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STB7NK80Z-1 Datasheet PDF : 17 Pages
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Electrical characteristics
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Drain-source
V(BR)DSS Breakdown voltage
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
Drain Current (VGS = 0)
Gate-body leakage
Current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID =1 mA, VGS = 0
800
V
VDS = Max rating
VDS = Max rating, TC = 125 °C
1 µA
50 µA
VGS = ± 20 V
± 10 µA
VDS = VGS, ID = 100 µA
3 3.75 4.5 V
VGS = 10 V, ID = 2.6 A
1.5 1.8
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Ciss
Coss
Crss
Forward transconductance VDS = 15 V, ID = 2.6 A
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
-
5
S
1138
pF
- 122
pF
25
pF
Coss eq. Equivalent output
(2)
capacitance
VDS =0 , VDS = 0 to 640 V
- 50
pF
td(on)
tr
tr(off)
Turn-on delay time
Rise time
Turn-off delay time
VDD = 400 V, ID = 2.6 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
20
12
-
45
ns
ns
ns
tr
Fall time
20
ns
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 640 V, ID = 5.2 A,
VGS = 10 V
(see Figure 18)
40 56 nC
-
7
nC
21
nC
tr(Voff) Off-voltage rise time
VDD = 640 V, ID = 5.2 A,
12
ns
tr
Fall time
RG = 4.7 Ω, VGS = 10 V
- 10
ns
tc
Cross-over time
(see Figure 17)
20
ns
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
4/17
Doc ID 8979 Rev 6
 

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