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K5A50D View Datasheet(PDF) - Toshiba

Part Name
Description
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K5A50D Datasheet PDF : 6 Pages
1 2 3 4 5 6
TK5A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
TK5A50D
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.)
High forward transfer admittance: Yfs= 3.0 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
500
V
±30
V
5
A
20
35
W
150
mJ
5
A
3.5
mJ
150
°C
55 to 150
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Internal Connection
Characteristics
Symbol
Max
Unit
2
Thermal resistance, channel to case
Rth (ch-c)
3.57
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
1
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 10.2 mH, RG = 25 Ω, IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
3
1
2009-09-29
 

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