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30F126 View Datasheet(PDF) - Toshiba

Part Name
Description
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30F126 Datasheet PDF : 73 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
General-Purpose Transistors (Dual)
VCEO IC
Classification (V) (mA)
Max Max
CST6
1.0
fS6
1.0
ESV
1.6
Dual Type
USV
2.0
SMV
2.9
(mm)
NPN + PNP
NPN
(mm)
(mm)
PNP
NPN + PNP PNP + NPN
NPN
(mm)
PNP
NPN
(mm)
PNP
PNP + NPN
General
-purpose
Low noise
High current
(HN2B26CT) (HN1C26FS) (HN1A26FS)
2SA1873
150
50
(100)
(18) **
(10)
(7) (HN1B26FS) HN4B01JE 2SC4944
(1) 2SC4207 2SA1618
(HN2C26FS) (HN2A26FS)
(9)
(6)
(2) HN4A56JU
(2)
(1)
(12)
(11)
(4)
30 500
50 500
120 100
12 400
12 500
15 800
25 800
30 800
10 2000
20 2000
HN4C05JU
(2)
HN4B04J
(3) *
HN4C06J HN4A06J
(2)
(1) HN4B06J
HN4C51J HN4A51J
(3)
(5)
(4)
HN4C08J HN4A08J
(2)
(1)
Strobe
10 5000
High breakdown
80 300
voltage
High hFE
50 150
Muting
20 300
High-speed
15 200
switching
High-voltage
200 50
switching
High breakdown 250 50
voltage
300 100
Darlington 40 300
For the PNP transistors, the minus sign () indicating a negative voltage is omitted.
The ratings enclosed in parenthesis are for those devices whose part numbers are enclosed in parentheses.
The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
Internal Connections
Number of Pins
1
2
3
4
5
6
5
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
7
8
9
10
11
12
6
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
13
14
15
16
17
18
6
Q1
Q2
Q1
Q1
Q1
Q2
Q2
Q1
Q1
Q2
Q2
Q2
The internal connection diagrams only show the general configurations of the circuits.
5
2010/9 SCE0004K
 

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