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FQPF10N60C View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FQPF10N60C
Fairchild
Fairchild Semiconductor Fairchild
FQPF10N60C Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Package Marking and Ordering Information
Device Marking
FQP10N60C
FQPF10N60C
Device
FQP10N60C
FQPF10N60C
Package
TO-220
TO-220F
Reel Size
--
--
Tape Width
--
--
Quantity
50
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS/
TJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
600
ID = 250 µA, Referenced to 25°C
--
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
VDS = 480 V, TC = 125°C
--
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
2.0
VGS = 10 V, ID = 4.75 A
--
VDS = 40 V, ID = 4.75 A
(Note 4)
--
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
--
Crss
Reverse Transfer Capacitance
--
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 300 V, ID = 9.5A,
--
RG = 25
--
--
(Note 4, 5)
--
VDS = 480 V, ID = 9.5A,
--
VGS = 10 V
--
(Note 4, 5)
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 9.5 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 9.5 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 14.2mH, IAS = 9.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 9.5A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
--
--
--
--
(Note 4)
--
--
--
0.7
--
--
1
--
10
--
100
--
-100
--
4.0
0.6 0.73
8.0
--
1570
166
18
2040
215
24
23
55
69
150
144
300
77
165
44
57
6.7
--
18.5
--
--
9.5
--
38
--
1.4
420
--
4.2
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
µC
2
FQP10N60C / FQPF10N60C Rev. C
www.fairchildsemi.com
 

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