HN58X24512FPI View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

View to exact match

HN58X24512FPI

Two-wire serial interface 512k EEPROM (64-kword × 8-bit)

Hitachi -> Renesas Electronics 

HN58X24512I

Page Write:

The EEPROM is capable of the page write operation which allows any number of bytes up to 128 bytes to

be written in a single write cycle. The page write is the same sequence as the byte write except for

inputting the more write data. The page write is initiated by a start condition, device address word,

memory address(n) and write data (Dn) with every ninth bit acknowledgment. The EEPROM enters the

page write operation if the EEPROM receives more write data (Dn+1) instead of receiving a stop condition.

The a0 to a6 address bits are automatically incremented upon receiving write data (Dn+1). The EEPROM

can continue to receive write data up to 128 bytes. If the a0 to a6 address bits reaches the last address of

the page, the a0 to a6 address bits will roll over to the first address of the same page and previous write data

will be overwritten. Upon receiving a stop condition, the EEPROM stops receiving write data and enters

internally-timed write cycle.

Page Write Operation

Device

address

1st Memory

address (n)

10100 W

Start

ACK

R/W

Note: 1. Don't care bit.

2nd Memory

address (n)

Write data (n) Write data (n+m)

ACK

ACK

ACK

ACK

Stop

13

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