BDX33C View Datasheet(PDF) - STMicroelectronics
Part Name
Description
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BDX33C Datasheet PDF : 4 Pages
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BDX33B BDX33C
®
BDX34B BDX34C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
DESCRIPTION
The BDX33B and BDX33C are silicon
Epitaxial-Base NPN power transistors in
monolithic Darlington configuration mounted in
Jedec TO-220 plastic package. They are intented
for use in power linear and switching applications.
The complementary PNP types are BDX34B and
BDX34C respectively.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 KΩ
R2 Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
IC
Collector Current
ICM Collector Peak Current
IB
Base Current
Ptot Total Dissipation at Tc ≤ 25 oC
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
October 1999
NPN
PNP
BDX33B
BDX33C
BDX34B
BDX34C
80
100
80
100
10
15
0.25
70
-65 to 150
150
Unit
V
V
A
A
A
W
oC
oC
1/4
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