MMBT4403LT3 View Datasheet(PDF) - ON Semiconductor
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Description
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| MMBT4403LT3 Datasheet PDF : 0 Pages | |||
MMBT4403LT1
Switching Transistor
PNP Silicon
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
−40
−40
−5.0
−600
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol Max Unit
Total Device Dissipation FR− 5 Board (Note 1)
PD
TA = 25°C
Derate above 25°C
225
mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300
mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
RqJA
TJ, Tstg
417
−55 to
+150
°C/W
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318−08
STYLE 6
MARKING DIAGRAM
2T D
2T = Specific Device Code
D = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2004
1
September, 2004 − Rev. 3
Publication Order Number:
MMBT4403LT1/D
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