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CXK591000YM View Datasheet(PDF) - Sony Semiconductor

Part NameDescriptionManufacturer
CXK591000YM 131,072-word ×9-bit High Speed CMOS Static RAM Sony
Sony Semiconductor Sony
CXK591000YM Datasheet PDF : 13 Pages
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Data retention waveform
• Low supply voltage data retention waveform (1) (CE1 control)
tCDRS
Data retention mode
tR
VCC
4.5V
2.2V
VDR
CE1
GND
CE1 ≥ VCC – 0.2V
• Low supply voltage data retention waveform (2) (CE2 control)
VCC
4.5V
CE2
VDR
0.4V
GND
Data retention mode
tCDRS
tR
CE2 ≤ 0.2V
CXK591000TM/YM/M
Data Retention Characteristics
(Ta = 0 to +70°C)
Item
Symbol
Test conditions
Min. Typ. Max. Unit
Data retention
voltage
VDR
∗1
2.0
—
5.5 V
Data retention
current
ICCDR1 VCC = 3.0V∗1
0 to +70°C —
0 to +40°C —
+25°C
—
ICCDR2 VCC = 2.0 to 5.5V∗1
—
—
—
0.5
0.8∗2
14
3 ÂľA
1.4
24 ÂľA
Data retention
setup time
tCDRS
Chip disable to data retention
mode
0
—
— ns
Recovery time
tR
5
—
— ms
∗1 CE1 ≥ Vcc – 0.2V, CE2 ≥ Vcc – 0.2V (CE1 control) or CE2 ≤ 0.2V (CE2 control)
∗2 VCC = 5V, Ta = 25°C
–9–
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