CXK591000M View Datasheet(PDF) - Sony Semiconductor

Part Name

Description

View to exact match

CXK591000M

131,072-word ×9-bit High Speed CMOS Static RAM

Sony Semiconductor 

DC Recommended Operating Conditions (Ta = 0 to +70°C, GND = 0V)

Item

Symbol Min.

Typ.

Max. Unit

Supply voltage

VCC

4.5

5.0

5.5

V

Input high voltage

VIH

Input low voltage

VIL

2.2

–0.3∗

—

VCC + 0.3 V

—

0.8

V

∗ VIL = –3.0V Min. for pulse width less than 50ns.

CXK591000TM/YM/M

Electrical Characteristics

• DC Characteristics

Item

System

(VCC = 5V ± 10%, GND = 0V, Ta = 0 to +70°C)

Test conditions

Min. Typ.∗ Max. Unit

Input leakage current

ILI

VIN = GND to VCC

–1

—

+1 µA

Output leakage

current

CE1 = VIH or CE2 = VIL or

ILO

OE = VIH or WE = VIL

VI/O = GND to VCC

–1

—

+1 µA

Operating power supply

current

ICC1

CE1 = VIL, CE2 = VIH

VIN = VIH or VIL

IOUT = 0mA

—

8

17 mA

Min. cycle

ICC2

duty = 100%

IOUT = 0mA

-55LL

-70LL

-10LL

—

50

100

—

45

80 mA

—

40

70

Average operating current

ICC3

Cycle time 1µs

duty = 100%

IOUT = 0mA

CE1 ≤ 0.2V

CE2 ≥ Vcc – 0.2V

VIL ≤ 0.2V

VIH ≥ Vcc – 0.2V

—

12

24 mA

Standby current

CE2 ≤ 0.2V

ISB1

CE1 ≥ Vcc – 0.2V

CE2 ≥ Vcc – 0.2V

0 to +70°C —

—

24

0 to +40°C —

—

5 µA

+25°C

—

0.8

2.4

ISB2

CE1 = VIH or CE2 = VIL

—

0.6

3 mA

Output high voltage

VOH

IOH = –1.0mA

2.4

—

—

V

Output low voltage

∗ VCC = 5V, Ta = 25°C

VOL

IOL = 2.1mA

—

—

0.4 V

–3–

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