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CXK591000M-10LL View Datasheet(PDF) - Sony Semiconductor

Part NameDescriptionManufacturer
CXK591000M-10LL 131,072-word ×9-bit High Speed CMOS Static RAM Sony
Sony Semiconductor Sony
CXK591000M-10LL Datasheet PDF : 13 Pages
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DC Recommended Operating Conditions (Ta = 0 to +70°C, GND = 0V)
Item
Symbol Min.
Typ.
Max. Unit
Supply voltage
VCC
4.5
5.0
5.5
V
Input high voltage
VIH
Input low voltage
VIL
2.2
–0.3
VCC + 0.3 V
0.8
V
VIL = –3.0V Min. for pulse width less than 50ns.
CXK591000TM/YM/M
Electrical Characteristics
• DC Characteristics
Item
System
(VCC = 5V ± 10%, GND = 0V, Ta = 0 to +70°C)
Test conditions
Min. Typ.Max. Unit
Input leakage current
ILI
VIN = GND to VCC
–1
+1 µA
Output leakage
current
CE1 = VIH or CE2 = VIL or
ILO
OE = VIH or WE = VIL
VI/O = GND to VCC
–1
+1 µA
Operating power supply
current
ICC1
CE1 = VIL, CE2 = VIH
VIN = VIH or VIL
IOUT = 0mA
8
17 mA
Min. cycle
ICC2
duty = 100%
IOUT = 0mA
-55LL
-70LL
-10LL
50
100
45
80 mA
40
70
Average operating current
ICC3
Cycle time 1µs
duty = 100%
IOUT = 0mA
CE1 0.2V
CE2 Vcc – 0.2V
VIL 0.2V
VIH Vcc – 0.2V
12
24 mA
Standby current
CE2 0.2V
ISB1
CE1 Vcc – 0.2V
CE2 Vcc – 0.2V
0 to +70°C —
24
0 to +40°C —
5 µA
+25°C
0.8
2.4
ISB2
CE1 = VIH or CE2 = VIL
0.6
3 mA
Output high voltage
VOH
IOH = –1.0mA
2.4
V
Output low voltage
VCC = 5V, Ta = 25°C
VOL
IOL = 2.1mA
0.4 V
–3–
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