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CXK5T81000AM-10LLX View Datasheet(PDF) - Sony Semiconductor

Part NameDescriptionManufacturer
CXK5T81000AM-10LLX 131072-word × 8-bit High Speed CMOS Static RAM Sony
Sony Semiconductor Sony
CXK5T81000AM-10LLX Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Data Retention Waveform
Low supply voltage data retention waveform (1) : CE1 control
tCDRS
Data retention mode
tR
VCC
4.5V
2.2V
VDR
CE1
GND
CE1 ≥ VCC – 0.2V
Low supply voltage data retention waveform (2) : CE2 control
VCC
4.5V
CE2
VDR
Data retention mode
tCDRS
tR
0.4V
GND
CE2 ≤ 0.2V
CXK581000ATM/AYM/AM/AP
Data Retention Characteristics
(Ta = 0 to +70°C)
Item
Data retention voltage
Data retention current
Data retention setup
time
Recovery time
Symbol
Test conditions
Min.
VDR
1
2.0
0 to +70°C
LL2 0 to +40°C —
ICCDR1 VCC = 3.0V1
+25°C
0 to +70°C —
SL3 0 to +40°C —
+25°C
ICCDR2
VCC = 2.0V to 5.5V1
LL2
SL3
tCDRS Chip disable to data retention mode
0
tR
5
Note)
1 CE1 VCC – 0.2V, CE2 VCC – 0.2V [CE1 Control] or CE2 0.2V [CE2 Control]
2 For -55LL/70LL/10LL
3 For -55SL/70SL/10SL
Typ.
0.4
0.15
0.7
0.3
Max. Unit
5.5 V
12
2.4
1.2
4
µA
0.8
0.3
20
12
— — ns
— — ms
–8–
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