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CXK5T81000AYN-12LLX View Datasheet(PDF) - Sony Semiconductor

Part Name
Description
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CXK5T81000AYN-12LLX
Sony
Sony Semiconductor Sony
CXK5T81000AYN-12LLX Datasheet PDF : 12 Pages
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CXK581000ATM/AYM/AM/AP
• Write cycle (2) : CE1 control
Address
OE
tAS
CE1
CE2
WE
Data in
tWC
tAW
tCW
tCW
tWR1 (3)
tWP
tDW
tDH
Data valid
Data out
• Write cycle (3) : CE2 control
Address
OE
CE1
tAS
CE2
WE
Data in
High impedance
tWC
tAW
tCW
tOCW
tWP
tWR1 (3)
tDW
tDH
Data valid
Data out
High impedance
1 Write is executed when both CE1 and WE are at low and CE2 is at high simultaneously.
2 Do not apply the data input voltage of the opposite phase to the output while the I/O pin is in output condition.
3 tWR1 is tested from either the rising edge of CE1 or the falling edge of CE2, whichever comes earlier, until
the end of the write cycle.
–7–
 

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