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CXK5T81000ATM View Datasheet(PDF) - Sony Semiconductor

Part NameDescriptionManufacturer
CXK5T81000ATM 131072-word × 8-bit High Speed CMOS Static RAM Sony
Sony Semiconductor Sony
CXK5T81000ATM Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
CXK581000ATM/AYM/AM/AP
Electrical Characteristics
• DC Characteristics
(VCC = 5V ±10%, GND = 0V, Ta = 0 to = +70°C)
Item
Symbol
Test conditions
Input leakage current ILI VIN = GND to VCC
Min. Typ.1 Max. Unit
–1
1
Output leakage current
ILO
CE1 = VIH or CE2 = VIL or OE = VIH
or WE = VIL, VI/O = GND to VCC
–1
1 µA
Operating power
supply current
CE1 = VIL, CE2 = VIH
ICC1 VIN = VIH or VIL
IOUT = 0mA
Min. cycle
ICC2 Duty = 100%
IOUT = 0mA
55LL/55SL
70LL/70SL
10LL/10SL
Average operating
current
Cycle time 1µs
duty = 100%
IOUT = 0mA
ICC3 CE1 0.2V
CE2 VCC – 0.2V
VIL 0.2V
VIH VCC – 0.2V
7
15
45
90
40
70
35
60
mA
10
20
Standby current
CE2 0.2V
LL2
ISB1
{or CE1 VCC – 0.2V
CE2 VCC – 0.2V
SL3
ISB2
Output high
VOH
voltage
Output low
VOL
voltage
1 VCC = 5V, Ta = 25°C
2 For -55LL/70LL/10LL
3 For -55SL/70SL/10SL
CE1 = VIH or CE2 = VIL
IOH = –1.0mA
IOL = 2.1mA
0 to +70°C
0 to +40°C
+25°C
0 to +70°C
0 to +40°C
+25°C
20
4
— 0.7
2 µA
12
— 2.4
— 0.3
1
— 0.6
3 mA
2.4 —
V
— 0.4
–3–
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