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MOC217R2V-M-2003 View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
MOC217R2V-M(2003) SMALL OUTLINE SURFACE MOUNT PHOTOTRANSISTOR OPTOCOUPLERS Fairchild
Fairchild Semiconductor Fairchild
MOC217R2V-M Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
MOC215-M
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC216-M
MOC217-M
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified)
Characteristic
EMITTER
Forward Voltage
Reverse Leakage Current
Capacitance
DETECTOR
Collector-Emitter Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Capacitance
COUPLED
Output Collector Current(4)
MOC215-M
MOC216-M
MOC217-M
Collector-Emitter Saturation Voltage
Turn-On Time
Turn-Off Time
Rise Time
Fall Time
Input-Output Isolation Voltage(1,2,3)
Isolation Resistance(2)
Isolation Capacitance(2)
Symbol Min
(IF = 1.0 mA) VF
(VR = 6.0 V) IR
C
(VCE = 5.0 V, TA = 25°C)
(VCE = 5.0 V, TA = 100°C)
ICEO
(IC = 100 µA) BVCEO 30
(IE = 100 µA) BVECO 7.0
(f = 1.0 MHz, VCE = 0) CCE
(IF = 1.0 mA, VCE = 5.0 V) CTR
(IC = 100µA, IF = 1.0mA)
(IC = 2.0 mA, VCC = 10 V,
RL = 100 , fig. 10)
(IC = 2.0 mA, VCC = 10 V,
RL = 100 , fig. 10)
(IC = 2.0 mA, VCC = 10 V,
RL = 100 , fig. 10)
(IC = 2.0 mA, VCC = 10 V,
RL = 100 , fig. 10)
(f = 60 Hz, t = 1.0 min.)
(VI-O = 500 V)
(VI-O = 0, f = 1.0 MHz)
VCE(sat)
ton
toff
tr
tf
VISO
RISO
CISO
20
50
100
2500
1011
Typ**
1.07
0.001
18
1.0
1.0
100
10
7.0
4.0
4.0
3.0
3.0
0.2
Max
1.3
100
50
0.4
Unit
V
µA
pF
nA
µA
V
V
pF
%
V
µs
µs
µs
µs
Vac(rms)
pF
** Typical values at TA = 25°C unless otherwise noted.
1. Input-Output Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. VISO rating of 2,500 VAC(RMS) for t = 1 minute is equivalent to a rating of 3,000 VAC(RMS) for t = 1 second.
4. Current Transfer Ratio (CTR) = IC/IF x 100%.
© 2002 Fairchild Semiconductor Corporation
Page 3 of 9
4/10/03
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