Philips Semiconductors
Silicon RF switches
Product specification
BF1108; BF1108R
0
handbook, halfpage
|s21(on)| 2
(dB)
−1
−2
−3
MGS357
0
handbook, halfpage
|s21(off)| 2
(dB)
−20
−40
MGS358
−4
0
400
800 f (MHz) 1200
VSC = VDC = 0 V; RS = RL = 50 Ω; IF = 0 mA (diode forward current);
Measured in test circuit (Fig.6).
Fig.4 Losses (on-state) as a function of
frequency; typical values.
−60
0
400
800 f (MHz) 1200
VSC = VDC = 5 V; RS = RL = 50 Ω; IF = 1 mA (diode forward current);
Measured in test circuit (Fig.6).
Fig.5 Isolation (off-state) as a function of
frequency; typical values.
handbook, full pagewidth
On-state: V = 0 V.
Off-state: V = 5 V.
1999 Nov 18
V 1 nF
100 kΩ
50 Ω
input
BF1108/BF1108R 47 kΩ
1 nF
1 nF
50 Ω
output
4.7 kΩ
100 kΩ
V 1 nF
MBL028
Fig.6 Test circuit.
5