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BTA/BTB12-XXXSW View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
BTA/BTB12-XXXSW 12A TRIACs ST-Microelectronics
STMicroelectronics ST-Microelectronics
BTA/BTB12-XXXSW Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
BTA/BTB12 and T12 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
s SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)
Symbol
Test Conditions Quadrant
T12
BTA/BTB12
T1235 TW
SW
CW
BW
IGT (1)
VGT
VD = 12 V
I - II - III MAX.
RL = 30
I - II - III MAX.
35
5
10
35
50
1.3
VGD VD = VDRM RL = 3.3 kI - II - III MIN.
0.2
Tj = 125°C
IH (2) IT = 100 mA
MAX. 35
10
15
35
50
IL
IG = 1.2 IGT
I - III MAX. 50
10
25
50
70
II
60
15
30
60
80
dV/dt (2) VD = 67 %VDRM gate open
Tj = 125°C
MIN. 500
20
40
500 1000
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C
MIN.
-
3.5
6.5
-
-
(dV/dt)c = 10 V/µs Tj = 125°C
-
1
2.9
-
-
Without snubber Tj = 125°C
6.5
-
-
6.5
12
s STANDARD (4 Quadrants)
Symbol
Test Conditions
Quadrant
IGT (1)
VGT
VGD
IH (2)
IL
VD = 12 V RL = 30
VD = VDRM RL = 3.3 kTj = 125°C
IT = 500 mA
IG = 1.2 IGT
dV/dt (2) VD = 67 %VDRM gate open Tj = 125°C
(dV/dt)c (2) (dI/dt)c = 5.3 A/ms
Tj = 125°C
I - II - III
IV
ALL
ALL
I - III - IV
II
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
BTA/BTB12
C
B
25
50
50
100
1.3
0.2
25
50
40
50
80
100
200
400
5
10
Unit
mA
V
V
mA
mA
V/µs
A/ms
Unit
mA
V
V
mA
mA
V/µs
V/µs
STATIC CHARACTERISTICS
Symbol
VT (2)
Vto (2)
Rd (2)
IDRM
IRRM
Test Conditions
ITM = 17 A tp = 380 µs
Threshold voltage
Tj = 25°C
Tj = 125°C
Dynamic resistance
VDRM = VRRM
Tj = 125°C
Tj = 25°C
Tj = 125°C
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
MAX.
MAX.
MAX.
MAX.
Value
Unit
1.55
V
0.85
V
35
m
5
µA
1
mA
2/7
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